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2N7002E
datasheet
by NXP Semiconductors
Description
2N7002E - N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.385 A; RDS(on): 3000@10V4000@4.5V mOhm; VDSmax: 60 V
Datasheet Type
Original
RoHS
Yes
Pb Free
Yes
Lifecycle
Obsolete
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2N7002E
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